Multi-faced molded semiconductor package and related methods

ABSTRACT

Implementations of a method of forming a semiconductor package may include forming electrical contacts on a first side of a wafer, applying a photoresist layer to the first side of the wafer, patterning the photoresist layer, and etching notches into the first side of the wafer using the photoresist layer. The method may include applying a first mold compound into the notches and over the first side of the wafer, grinding a second side of the wafer opposite the first side of the wafer to the notches formed in the first side of the wafer, applying one of a second mold compound and a laminate resin to a second side of the wafer, and singulating the wafer into semiconductor packages. Six sides of each semiconductor package may be covered by one of the first mold compound, the second mold compound, and the laminate resin.

BACKGROUND 1. Technical Field

Aspects of this document relate generally to semiconductor packages,such as chip scale packages and flip chip packages. More specificimplementations involve semiconductor packages covered by a moldcompound.

2. Background

Decreasing semiconductor package size has long been desirable within theindustry as it has generally resulted in economic benefits as well astechnological benefits. A decrease in semiconductor package size oftenresults in an increase in risk of damage to the semiconductor die andpackage during manufacturing. A protective cover or molding hasgenerally covered portions of the semiconductor packages to protect thesemiconductor from, among other things, the environment, electrostaticdischarge, and electrical surges.

SUMMARY

Implementations of a method of forming a semiconductor package mayinclude forming a plurality of electrical contacts on a first side of awafer, applying a photoresist layer to the first side of the wafer,patterning the photoresist layer, and etching a plurality of notchesinto the first side of the wafer using the photoresist layer. The methodmay include applying a first mold compound into the plurality of notchesand over the first side of the wafer, grinding a second side of thewafer opposite the first side of the wafer to the plurality of notchesformed in the first side of the wafer, applying one of a second moldcompound and a laminate resin to a second side of the wafer, andsingulating the wafer into a plurality of semiconductor packages. Sixsides of each semiconductor package may be covered by one of the firstmold compound, the second mold compound, and the laminate resin.

Implementations of a method of forming a semiconductor package mayinclude one, all, or any of the following:

The first mold compound may be applied using one of a printer moldingtechnique and a compression molding technique.

A perimeter of a first side of a die within the package may besubstantially one of an octagon and a rectangle with rounded corners.

The plurality of notches may be etched into the first side of the waferusing the photoresist layer and one of a polyimide, a polybenzoxazole,and a phenol resin.

The plurality of notches may be etched into the first side of the waferusing the photoresist layer and a passivation mask.

One of a solder resist layer, a passivation layer, an interlayer, and acombination of a solder resist layer, a passivation layer, and aninterlayer may be coupled to the first side of the wafer and may becovered by the first mold compound.

An etching process may be used to singulate the plurality of packages.

Implementations of a method of forming a semiconductor package mayinclude forming a metal layer on a first side of a wafer, applying afirst photoresist layer on the metal layer, patterning the firstphotoresist layer, forming electrical contacts coupled to the metallayer using the first photoresist layer, removing the first photoresistlayer, etching the metal layer, and etching a plurality of notches intothe first side of the wafer. The method may include applying a firstmold compound into the plurality of notches, over the electricalcontacts, and over the first side of the wafer, exposing the electricalcontacts through the first mold compound through grinding the first moldcompound, grinding a second side of the wafer opposite the first side ofthe wafer to the plurality of notches formed in the first side of thewafer, applying one of a second mold compound and a laminate resin tothe second side of the wafer, and singulating the wafer into a pluralityof semiconductor packages. Each semiconductor package may be covered byone of a first molding compound, the second molding compound, and alaminate resin on the first side, the second side, a third side, afourth side, a fifth side, and a sixth side of each semiconductorpackage.

Implementations of a method of forming a semiconductor package mayinclude one, all, or any of the following:

A first side of a die within each semiconductor package may include aperimeter that is one of an octagon and a rectangle with rounded edges.

The first mold compound may be anchored to a sidewall of the pluralityof notches through a plurality of ridges formed in the sidewall of theplurality of notches.

The plurality of notches may be formed using a deep reactive-ion etchingtechnique during etching of the plurality of notches.

The plurality of notches may be etched into the first side of the waferusing one of a polyimide, a polybenzoxazole, and a phenol resin.

The plurality of notches may be etched into the first side of the waferusing a passivation mask.

One of a solder resist layer, a passivation layer, an interlayer, and acombination of a solder resist layer, a passivation layer, and aninterlayer may be coupled to the first side of the wafer and may becovered by the first mold compound.

Implementations of a semiconductor package may include a die including afirst side, a second side, a third side, a fourth side, a fifth side,and a sixth side, the first side of the die including a plurality ofelectrical contacts. The package may include a first mold compoundcovering the first side of the die, the second side of the die, thethird side of the die, the fourth side of the die, and the fifth side ofthe die, wherein the plurality of electrical contacts extend through aplurality of openings in the first mold compound. The package mayinclude one of a second mold compound and a laminate resin covering thesixth side of the die, wherein there is no die chipping of the firstside of the die after singulation of the die.

Implementations of a method of forming a semiconductor package mayinclude one, all, or any of the following:

The sixth side may oppose the first side.

A perimeter of the first side of the die may include one of an octagonand a rounded rectangle.

The first mold compound may be anchored to the second side of the die,the third side of the die, the fourth side of the die, and the fifthside of the die through a plurality of ridges formed in the second sideof the die, the third side of the die, the fourth side of the die, andthe fifth side of the die.

The plurality of electrical contacts may include one of a combination ofnickel, gold, and aluminum and a combination of tin, silver, and copper.

The package may include one of a solder resist layer, a passivationlayer, an interlayer, and a combination of a solder resist layer, apassivation layer, and an interlayer coupled to the first side of thewafer and covered by the first mold compound.

The foregoing and other aspects, features, and advantages will beapparent to those artisans of ordinary skill in the art from theDESCRIPTION and DRAWINGS, and from the CLAIMS.

BRIEF DESCRIPTION OF THE DRAWINGS

Implementations will hereinafter be described in conjunction with theappended drawings, where like designations denote like elements, and:

FIG. 1 is a cross sectional side view of a semiconductor package;

FIG. 2 is a top view of a semiconductor package;

FIG. 3 is a first process flow illustrating the formation of asemiconductor package;

FIG. 4 is a top view of a semiconductor wafer with a plurality ofnotches cut therein;

FIG. 5 is a top view of a semiconductor wafer with a plurality ofnotches etched therein;

FIG. 6 is a top view of a second implementation of a semiconductor waferwith a plurality of notches etched therein;

FIG. 7 is a top view of a third implementations of a semiconductor waferwith a plurality of notches etched therein;

FIG. 8 is a cross sectional view of a portion of a wafer with moldingapplied thereto;

FIG. 8A is a magnified cross sectional view of the bond between a moldand a sidewall of a notch formed in the die;

FIG. 9 is a second process flow illustrating the formation of asemiconductor package;

FIG. 10 is a third process flow illustrating a portion of the formationof a semiconductor package.

FIG. 11 illustrates a first alternative for forming the notches in thethird process flow.

FIG. 12 illustrates a second alternative for forming the notches in thethird process flow;

FIG. 13 illustrates a third alternative for forming the notches in thethird process flow;

FIG. 14 illustrates a fourth alternative for forming the notches in thethird process flow; and

FIG. 15 is a fourth process flow illustrating the formation of asemiconductor package.

DESCRIPTION

This disclosure, its aspects and implementations, are not limited to thespecific components, assembly procedures or method elements disclosedherein. Many additional components, assembly procedures and/or methodelements known in the art consistent with the intended semiconductorpackage will become apparent for use with particular implementationsfrom this disclosure. Accordingly, for example, although particularimplementations are disclosed, such implementations and implementingcomponents may comprise any shape, size, style, type, model, version,measurement, concentration, material, quantity, method element, step,and/or the like as is known in the art for such semiconductor packages,and implementing components and methods, consistent with the intendedoperation and methods.

Referring to FIG. 1, a cross sectional side view of a semiconductorpackage is illustrated. The semiconductor package includes a die 2 whichincludes a first side 4, a second side 6, a third side 8 opposite thesecond side 6, a fourth side, a fifth side opposite the fourth side(both fourth and fifth sides are located into and out of the drawingsurface in this view), and a sixth side 10 opposite the first side 4. Invarious implementations, the second side 6 of the die 2, the third side8 of the die, the fourth side of the die, and/or the fifth side of thedie may include a notch therein.

In various implementations, one or more electrical contacts 12 arecoupled to the first side 4 of the die 2. In various implementations,the electrical contacts are metal and may be, by non-limiting example,copper, silver, gold, nickel, titanium, aluminum, any combination oralloy thereof, or another metal. In still other implementations, theelectrical contacts 12 may not be metallic but may rather be anotherelectrically conductive material.

In various implementations, a first mold compound 14 covers the first,second, third, fourth, and fifth sides of the die. In variousimplementations, the mold compound may be, by non-limiting example, anepoxy mold compound, an acrylic molding compound, or another type ofmaterial capable of physically supporting the die and providingprotection against ingress of contaminants. In various implementations,a laminate resin or second mold compound covers the sixth side 10 of thedie.

The electrical contacts 12 each extend through a corresponding pluralityof openings in the first mold compound 14. In various implementations,the electrical contacts 12 extend beyond the surface of the molding 14,as illustrated in FIG. 1, while in other implementations the electricalcontacts are level or flush with the surface of the molding compound 14.

In various implementations, the sides of the die will have no chips orcracks, particularly on the semiconductor device side of the die. Thisis accomplished through forming the second, third, fourth, and fifthsides of each die using etching techniques rather than a conventionalsawing technique. Such a method is more fully disclosed is associationwith the discussion of FIG. 3 herein.

Further, the first mold compound may be anchored to the second, third,fourth, and fifth sides of the die. In various implementations, theanchor effect is the result of interaction of the mold compound with aplurality of ridges formed along the second, third, fourth, and fifthsides of the die. This anchoring effect is more fully disclose inassociation with the discussion of FIG. 3 herein.

Referring to FIG. 2, a top view of a semiconductor package isillustrated. The molding compound 14 is clearly seen in FIG. 2encompassing a perimeter of each electrical contact 12 (the shaded areasin FIG. 2) so that the entire first side of the die (along with everyother side) is not exposed.

Referring to FIG. 3, a first process flow illustrating the formation ofa semiconductor package is illustrated. In various implementations, themethod for making a semiconductor package includes providing a wafer 16which may include any particular type of substrate material, including,by non-limiting example, silicon, sapphire, ruby, gallium arsenide,glass, or any other semiconductor wafer substrate type. In variousimplementations, a metal layer 18 is formed on a first side 28 of thewafer 16 and may be formed using a sputtering technique. In otherimplementations, the metal layer 18 is formed using other techniques,such as, by non-limiting example, electroplating, electroless plating,chemical vapor deposition, and other methods of depositing a metallayer. In a particular implementation, the metal layer is atitanium/copper seed layer, while in other implementations, the metallayer may include, by non-limiting example, copper, titanium, gold,nickel, aluminum, silver, or any combination or alloy thereof.

In various implementations, a first photoresist layer 20 is formed andpatterned over the metal layer 18. One or more electrical contacts 22may be formed on the metal layer 18 and within the photoresist layer 20.In various implementations this may be done using various electroplatingor electroless plating techniques, though deposition and etchingtechniques could be employed in various implementations. The electricalcontacts 22 may be any type of electrical contact previously disclosedherein (bumps, studs, and so forth). In various implementations, thefirst photoresist layer 20 is removed through an ashing or solventdissolution process and the metal layer 18 may be etched away after theelectrical contacts are formed.

In various implementations, a second photoresist layer 24 is formed andpatterned over the wafer 16. In various implementations, as illustratedin FIG. 3, the second patterned photoresist layer 24 does not cover theelectrical contacts 22. In other implementations, the second photoresistlayer is formed conformally over the electrical contacts along with thewafer. Referring to FIG. 9, a second process flow illustrating theformation of a semiconductor package is illustrated. In this processflow, a second photoresist layer 68 is formed as a conformal layer overthe electrical contacts 70. Aside from this difference, the processdepicted in FIG. 9 includes the same process steps as the processdepicted in FIG. 3.

Referring back to FIG. 3, in various implementations, the methodincludes etching a plurality of notches 26 into the first side 28 of thewafer 16 using the second patterned photoresist layer. In variousimplementations, the width of the notches may be between about 50 andabout 150 microns wide while in other implementations, the width of thenotches may be less than about 50 microns or more than about 150microns. In various implementations, the depth of the plurality ofnotches 26 may extend between about 25 and 200 microns into the waferwhile in other implementations, the depth of the plurality of notches 26may be less than about 25 microns or more than about 200 microns.

In various implementations, the plurality of notches may be formedusing, by non-limiting example, plasma etching, deep-reactive ionetching, or wet chemical etching. In various implementations, a processmarketed under the tradename BOSCH® by Robert Bosch GmbH, StuttgartGermany (the “Bosch process”), may be used to form the plurality ofnotches 26 in the first side 28 of the wafer 16.

Referring now to FIG. 4, a top view of a conventional semiconductorwafer with a plurality of saw cuts surrounding the plurality of die isillustrated. Using a saw to cut notches in a semiconductor waferinvariably results in the production of chips and cracks on the deviceside of the die and in the sidewalls 34 of the notches 30. The presenceof the cracks and chips has the potential to compromise the reliabilityof the semiconductor package if the cracks and chips propagate into thedevice portion of the semiconductor die. Since the saw process involvesthe rubbing of the rotating blade against the die surface, the chippingand cracking can only be managed through saw processing variables (waferfeed speed, blade kerf width, cut depth, multiple saw cuts, bladematerials, etc.) but not eliminated. Furthermore, because the sawprocess relies on passing the wafer underneath the blades, only squareand rectangular sized die are typically produced using conventional sawtechniques.

Referring to FIG. 5, a top view of a semiconductor wafer with aplurality of notches etched therein is illustrated. In contrast to theappearance of the die processed using the conventional sawing methodillustrated in FIG. 4, the plurality of notches 36 in the wafer 38formed using etching techniques have edges and sidewalls 40 that do notexhibit cracks or chips therein. Because of the absence of the cracksand chips, the use of etching techniques to form a plurality of notchesin a semiconductor wafer is likely to improve the reliability of theresulting semiconductor packages.

Furthermore, using etching techniques to form a plurality of notches ina wafer allows for different shapes of perimeters of die to be produced.In various implementations, the second photoresist layer described inrelation to FIG. 3 may be patterned in a way to form a plurality ofnotches that do not form die with rectangular perimeters. For example,referring to FIG. 6, a top view of a second implementation of asemiconductor wafer with a plurality of notches etched therein isillustrated. In various implementations, a plurality of notches 42 maybe formed in a wafer 44. The plurality of notches 42 may form eventualdie 46 with perimeters that are octagons. Referring to FIG. 7, a topview of a third implementations of a semiconductor wafer with aplurality of notches etched therein is illustrated. In variousimplementations, a plurality of notches 48 may be formed in a wafer 50.The plurality of notches 48 may form eventual die 52 with perimetersthat are rounded rectangles. In other implementations, a plurality ofnotches may be formed in a wafer that form eventual die with perimetersthat are any other closed geometrical shape.

Referring back to FIG. 3, in various implementations, the plurality ofnotches 26 formed have two substantially parallel sidewalls that extendsubstantially straight into the first side 28 of the wafer 16. In otherimplementations, two or more stepwise notches are formed in the firstside 28 of the wafer 16. Each stepwise notch may be formed by creating afirst notch in the wafer, and then forming a second more narrow notchwithin each first notch.

Referring to FIG. 3, an implementation of a method for forming asemiconductor package includes applying a first mold compound 54 intothe plurality of notches 26 and over the first side of the wafer. Invarious implementations, as illustrated by FIG. 3, the first moldcompound 54 may cover the electrical contacts 22. In otherimplementations, the first mold compound 54 may not completely cover theelectrical contacts 22. The first mold compound may be applied using, bynon-limiting example, a liquid dispensing technique, a transfer moldingtechnique, a printer molding technique, or a compression moldingtechnique. The molding compound may be an epoxy molding compound, anacrylic molding compound, or another type of molding compound disclosedherein.

In various implementations, the first mold compound 54 may be anchoredto a plurality of sidewalls 56 of a plurality of notches 26. Referringnow to FIG. 8, a cross sectional view of a portion of a wafer withmolding applied thereto is illustrated. Referring now to FIG. 8A, amagnified cross sectional view of the bond between a mold and a sidewallof a notch formed in the die is illustrated. In various implementations,a plurality of ridges 58 may be formed in a sidewall 56 of each notchwithin the plurality of notches. In a particular implementation, theheight of each ridge extending from the sidewall is substantially 0.2microns tall with a pitch of substantially one micron. Thus, inimplementations where the notch is 150 microns deep, there may besubstantially 150 microns on each sidewall of the notch. In otherimplementations, the notches may be taller or shorter than 0.2 micronsand may have a pitch more or less than one micron. The ridges may anchorthe first mold compound 54 to the sidewalls 56 of the plurality ofnotches. In various implementations where the plurality of notches areetched using the Bosch process, the etching process may form ridges inthe plurality of notches while etching the plurality of notches via thedeposition/etching cycles of the deep reactive ion etch, thus increasingthe adhesion between the first mold compound and the sidewall of eachnotch.

Referring back to FIG. 3, in various implementations where the firstmold compound 54 covers the electrical contacts 22, the electricalcontacts 22 may be exposed by grinding the first mold compound. Invarious implementations, a second side 60 of the wafer 16 may be groundto the plurality of notches 26 formed in the first side 28 of the wafer16. In this way the various die of the semiconductor wafer aresingulated from each other. In various implementations, the second side60 of the wafer 16 may be ground using, by non-limiting example, amechanical polishing technique, a chemical etching technique, acombination of a mechanical polishing and chemical etching technique, orany other grinding technique.

In various implementations, a second mold compound 62 or a laminateresin may be applied to the second side 60 of the wafer 16. Inimplementations where a second mold compound is applied, the moldcompound may be any type of mold compound disclosed herein and may beapplied using any technique disclosed herein.

In various implementations, as illustrated in the process flow depictedin FIG. 3, the first mold compound 54 is ground to expose the electricalcontacts 22 before the second side 60 of the wafer 16 is ground and thesecond mold compound is applied. In other implementations, the firstmold compound 54 may be ground to expose the electrical contacts 22after the second side 60 of the wafer 16 is ground and the second moldcompound is applied.

The method for making a semiconductor package includes singulating thewafer 16 into a plurality of semiconductor packages 64. The wafer 16 maybe singulated by cutting or etching through the wafer where theplurality of notches 26 were originally formed. The wafer may besingulated by using, by non-limiting example, a saw, a laser, awaterjet, plasma etching, deep reactive-ion etching, or chemicaletching. In various implementations, the Bosch process may be used tosingulate the wafer 16. The method used to singulate the wafer mayinclude singulating the wafer using thinner cuts or etches than wereused to form the plurality of notches 26. In this manner, the first moldcompound will cover the sides of each singulated die 66 within eachsemiconductor package 64. Specifically, in particular implementationsthe saw width used to singulate each semiconductor package may bebetween 20 and 40 microns thick. The semiconductor die within thesemiconductor package may be covered by either a mold compound or alaminate resin on all six sides of the semiconductor die.

In various implementations, the first side of the die within eachsemiconductor package may include a perimeter that is, by non-limitingexample, a rectangle, an octagon, a rectangle with rounded edges, or anyother closed geometric shape.

Referring now to FIG. 10, a third process flow illustrating a portion ofthe formation of a semiconductor package is illustrated. In variousimplementations the method for forming a semiconductor package includesproviding a wafer 72, which may be any type of wafer substrate disclosedherein. In various implementations, one or more metal pads 74 may becoupled to a first side 76 of the wafer 72. The metal pad may include,by non-limiting example, aluminum, copper, nickel silver, gold,titanium, or any combination or alloy thereof.

In various implementations, a first passivation layer 78 may be coupledto a portion of the first side 76 of the wafer 72. The first passivationlayer 78 may be a silicon dioxide passivation layer in variousimplementations, though it could be any of a wide variety of other typesof layers, including, by non-limiting example, silicon nitride,polyimide, or another polymer or deposited material. In variousimplementations, a second passivation layer 80 may be coupled to aportion of the first side 76 of the wafer 72. The second passivationlayer 80 may be a silicon nitride passivation layer. The secondpassivation layer may include the same material or a different materialfrom the first passivation layer.

In various implementations, a third layer 82 may be coupled to a portionof the first side 76 of the wafer 72. The third layer may be either apolyimide, a polybenzoxazole, a phenol resin, or a combination of apolyimide, a polybenzoxazole, and a phenol resin. In variousimplementations, a metal seed layer 84 may be formed over the thirdlayer and over the first side 76 of the wafer 72. The metal seed layer84 may be any type of metal layer disclosed herein. In variousimplementations, the metal seed layer 84 may directly contact portionsof the first side 76 of the wafer 72. In various implementations, themethod includes forming and patterning a first photoresist layer 86 overthe metal seed layer 84.

In various implementations, the method includes forming electricalcontacts 88 coupled to the metal seed layer 84 and within the firstphotoresist layer 86. The electrical contacts 88 may be any type ofelectrical contact disclosed herein. In various implementations, theelectrical contacts 88 may include a first layer 90 and a second layer92. In various implementations, the first layer 90 may include copperand the second layer 92 may include tin, silver, or a combination of tinand silver. In various implementations, the method of forming asemiconductor package includes removing the first photoresist layer 86and etching the portions of the metal seed layer 84 away that are notcovered by the electrical contacts, after the electrical contacts areformed.

In various implementations, the method of forming a semiconductorpackage includes forming and patterning a second photoresist layer 94over the first side 76 of the wafer 72. In various implementations, thesecond photoresist layer covers the electrical contacts 88, while inother implementations, the second photoresist layer 94 does not coverthe electrical contacts 88. The second photoresist layer 94 may be usedto etch a plurality of notches 96 into the wafer 72. The method includesremoving the second photoresist layer 94 after the plurality of notchesare etched into the wafer.

A first mold compound may be applied into the plurality of notches andover the first side 76 of the wafer 72 in the same manner the first moldcompound in FIG. 3 is applied. The remainder of the method for forming asemiconductor package as depicted in FIG. 10 may include exposing theelectrical contacts through grinding, grinding the backside of the waferto the plurality of notches, applying a second mold compound or laminateresin to a backside of the wafer, and singulating the wafer into aplurality of semiconductor packages. These portions of forming asemiconductor package may be the same as or similar to respectiveportions for forming a semiconductor package illustrated by FIG. 3 andpreviously disclosed herein.

In various implementations, the semiconductor package produced by themethod depicted in FIG. 10 may include one or more metal pads, one ormore passivation layers, a polyimide, a phenol resin, a polybenzoxazole,and any combination thereof, between the semiconductor die and the firstmold compound.

Referring to FIGS. 11-14, alternative methods for forming a plurality ofnotches in the process illustrated by FIG. 10 is illustrated. Referringto FIG. 11, a method of forming a plurality of notches using a patternedphotoresist layer and one of a polyimide, polybenzoxazole, and a phenolresin in combination with an etching process is illustrated. In variousimplementations, a patterned photoresist layer 98 may be over a mask 100including either a patterned polyimide layer, a patternedpolybenzoxazole layer, or a patterned phenol resin layer. The mask 100may be over a wafer 102. A notch 104 may be formed in the wafer 102using the patterned photoresist layer and the mask using any etchingprocess disclosed herein.

Referring to FIG. 12, a method of forming a plurality of notches usingone of a polyimide, polybenzoxazole, and a phenol resin in combinationwith any etching process disclosed herein is illustrated. The method maybe the same as the method depicted by FIG. 11, with the difference beingthat the method depicted by FIG. 12 does not include a patternedphotoresist layer used to form a notch 106 into a wafer 108.

Referring to FIG. 13, a method of forming a plurality of notches using apatterned photoresist layer and passivation mask is illustrated. Invarious implementations, a patterned photoresist layer 110 may be over apassivation mask 112. The passivation mask 112 may include anypassivation layer disclosed herein. The passivation mask 112 may be overa wafer 114. A notch 116 may be formed in the wafer 114 using thepatterned photoresist layer 110 and the passivation mask 112 and anyetching process disclosed herein.

Referring to FIG. 14, a method of forming a plurality of notches using apassivation mask in combination with any of the etching method disclosedherein is illustrated. The method may be the same as the method depictedby FIG. 13, with the difference being that the method depicted by FIG.14 does not include a patterned photoresist layer used to form a notch116 into a wafer 118.

Referring to FIG. 15, a fourth process flow illustrating the formationof a semiconductor package is illustrated. The method for forming asemiconductor package illustrated in FIG. 15 includes providing a wafer120. In various implementations, an interlayer 122 may be coupled to afirst side 124 of the wafer 120. In various implementations, apassivation layer 128 may be coupled to the wafer 120. The passivationlayer may be any type of passivation layer disclosed herein.

In various implementations, one or more electrical contacts 126 may becoupled to the wafer 120. In various implementations, the electricalcontacts include a bump 130. The electrical contacts may include a firstmetal layer 132 coupled to the bump 130. The first metal layer mayinclude any metal disclosed herein. In a particular implementation, thefirst metal layer includes nickel and gold. The electrical contacts 128may include a second metal layer 134 coupled to the first metal layer132. The second metal layer 134 may include any metal disclosed herein.In a particular implementation, the second metal layer 134 includesaluminum. In various implementations, a solder resist layer 136 may becoupled over the wafer 120. In other implementations, no solder resistlayer is included.

In various implementations, the passivation layer 128 may be patternedand may directly contact portions of the wafer 120. In suchimplementations, the patterned passivation layer, or mask, may be usedto etch a plurality of notches 138 into the first side 124 of the wafer120 using any etching process disclosed herein. The plurality of notchesmay be etched using any method disclosed herein, and may be any type ofnotch previously disclosed herein.

In various implementations, a first mold compound 140 is applied intothe plurality of notches 138 and over the first wafer 120. The firstmold compound 140 may be any mold compound disclosed herein and may beapplied using any technique disclosed herein. In variousimplementations, the first mold compound 140 does not entirely cover theelectrical contacts 126, as is illustrated by FIG. 15. In otherimplementations, the first mold compound does entirely cover theelectrical contacts 126. In implementations where the first moldcompound 140 does entirely cover the electrical contacts 126, the firstmold compound may be ground to expose the electrical contacts 126.

In various implementations, a second side 142 opposite the first side124 of the wafer 120 may be ground using any grinding method disclosedherein to the plurality of notches. A second mold compound 144 orlaminate resin may then be applied to the second side 142 of the wafer120.

The wafer 120 may then be singulated into a plurality of semiconductorpackages 146. The wafer may be singulated using any technique disclosedherein. The semiconductor die 148 with the semiconductor package 146 mayhave all six sides covered by a mold compound. In other implementations,the sixth side of the die 150 may be covered by a laminate resin.

In various implementations, the semiconductor package formed by themethod illustrated in FIG. 15 may include either a solder resist layer,a passivation layer, an interlayer, or a combination of a solder resistlayer, a passivation layer, and an interlayer coupled to the first sideof the wafer and covered by the first mold compound.

In places where the description above refers to particularimplementations of semiconductor packages and implementing components,sub-components, methods and sub-methods, it should be readily apparentthat a number of modifications may be made without departing from thespirit thereof and that these implementations, implementing components,sub-components, methods and sub-methods may be applied to othersemiconductor packages.

1. A method of forming a semiconductor package comprising: forming aplurality of electrical contacts on a first side of a wafer; applying aphotoresist layer to the first side of the wafer; patterning thephotoresist layer; etching a plurality of notches into the first side ofthe wafer using the photoresist layer; applying a first mold compoundinto the plurality of notches and over the first side of the wafer;grinding a second side of the wafer opposite the first side of the waferto the plurality of notches formed in the first side of the wafer;applying one of a second mold compound and a laminate resin to a secondside of the wafer; and singulating the wafer into a plurality ofsemiconductor packages, wherein six sides of each semiconductor packageare covered by one of the first mold compound, the second mold compound,and the laminate resin.
 2. The method of claim 1, wherein the first moldcompound is applied using one of a printer molding technique and acompression molding technique.
 3. The method of claim 1, wherein aperimeter of a first side of a die within the package is substantiallyone of an octagon and a rectangle with rounded corners.
 4. The method ofclaim 1, wherein the plurality of notches are etched into the first sideof the wafer using the photoresist layer and one of a polyimide, apolybenzoxazole, and a phenol resin.
 5. The method of claim 1, whereinthe plurality of notches are etched into the first side of the waferusing the photoresist layer and a passivation mask.
 6. The method ofclaim 1, wherein one of a solder resist layer, a passivation layer, aninterlayer, and a combination of a solder resist layer, a passivationlayer, and an interlayer is coupled to the first side of the wafer andcovered by the first mold compound.
 7. The method of claim 1, wherein anetching process is used to singulate the plurality of packages.
 8. Amethod of forming a semiconductor package comprising: forming a metallayer on a first side of a wafer; applying a first photoresist layer onthe metal layer; patterning the first photoresist layer; formingelectrical contacts coupled to the metal layer using the firstphotoresist layer; removing the first photoresist layer; etching themetal layer; etching a plurality of notches into the first side of thewafer; applying a first mold compound into the plurality of notches,over the electrical contacts, and over the first side of the wafer;exposing the electrical contacts through the first mold compound throughgrinding the first mold compound; grinding a second side of the waferopposite the first side of the wafer to the plurality of notches formedin the first side of the wafer; applying one of a second mold compoundand a laminate resin to the second side of the wafer; singulating thewafer into a plurality of semiconductor packages, wherein eachsemiconductor package is covered by one of a first molding compound, thesecond molding compound, and a laminate resin on the first side, thesecond side, a third side, a fourth side, a fifth side, and a sixth sideof each semiconductor package.
 9. The method of claim 8, wherein a firstside of a die within each semiconductor package comprises a perimeterthat is one of an octagon and a rectangle with rounded edges.
 10. Themethod of claim 8, wherein the first mold compound is anchored to asidewall of the plurality of notches through a plurality of ridgesformed in the sidewall of the plurality of notches.
 11. The method ofclaim 8, wherein the plurality of notches are formed using a deepreactive-ion etching technique during etching of the plurality ofnotches.
 12. The method of claim 8, wherein the plurality of notches areetched into the first side of the wafer using one of a polyimide, apolybenzoxazole, and a phenol resin.
 13. The method of claim 8, whereinthe plurality of notches are etched into the first side of the waferusing a passivation mask.
 14. The method of claim 8, wherein one of asolder resist layer, a passivation layer, an interlayer, and acombination of a solder resist layer, a passivation layer, and aninterlayer is coupled to the first side of the wafer and covered by thefirst mold compound. 15-20. (canceled)